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Terahertz imaging device structure
The successful development of the above imaging chip is an important advancement in THz high-speed imaging technology, which is of great significance for the development of high-speed, high-energy physical processes, material analysis, and biomedical imaging technologies in this frequency band.
(Original title: Ultra-high-speed terahertz array imaging chip successfully developed)
ã€Chinese instrument network instrument research and development】 High-speed imaging technology is one of the important research directions in the application of terahertz (THz) technology. It has important application value in material analysis, high-energy physics process analysis, biomedical imaging, and human body security. However, the lack of low-temperature matching readout circuits makes the design of fast-response photon-type focal plane array detectors very difficult. This has led to slow progress in high-speed and real-time imaging of THz. To solve this problem, the research team led by Cao Juncheng, a researcher of the Shanghai Institute of Microsystem and Information Technology of the Chinese Academy of Sciences, used molecular beam epitaxy to stack THz quantum well detectors (THzQWP) and light-emitting diodes (LEDs). Pixel imaging of the THz frequency upconverts the imaging chip. The chip's peak detection frequency is 5.2 THz, equivalent noise power is 5.2pWâ„Hz0.5, and the equivalent imaging pixel is 240×240. The imaging experiment of the THz quantum cascade laser (THzQCL) with this chip has been completed. Real-time imaging of several tens of micrometer diffraction fringes on the THzQCL spot has been achieved (Figure 2), and the THz QCL spot has been completed within 500 ns. Single-frame high-speed imaging (equivalent to two million frames/s imaging speed). The relevant research results were published in Scientific Reports 6, 25383, 2016.